IMCQ120R040M2HXTMA1

Part Number:
IMCQ120R040M2HXTMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
SIC DISCRETE
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 288W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +23V, -5V
Package / Case 22-PowerBSOP Module
Rds On (Max) @ Id, Vgs 39.6mOhm @ 17.5A, 18V
Vgs(th) (Max) @ Id 5.1V @ 5.5mA
Supplier Device Package PG-HDSOP-22-3
Gate Charge (Qg) (Max) @ Vgs 42.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 800 V