RJS6004WDPK-00#T0
Product Attributes
| Part Status | Obsolete |
|---|---|
| Mounting Type | Through Hole |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Configuration | 1 Pair Common Cathode |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |